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Open access Sep 2026

Array-Level Integration of MoS2-Hf0.5Zr0.5O2 Ferroelectric Memristors for in-Memory Image Preprocessing in Neural Networks.

In-memory computing using floating-gate memristor (FGMEM) arrays with 2D channels enables large-scale parallelism, low energy consumption, efficient hardware-level matrix-vector multiplications. However, tunneling-based FGMEM faces high operating voltage, slow programming, low on/off ratio, and a small memory window. H...

J. Lee, Won Woo Lee, Jung Um Park et al. · 0 citations

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