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Author

Ian Babich

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Open access Oct 2026

Displacement-Field-Induced Ionization of Defect States in High-Quality hBN

Encapsulation of two-dimensional (2D) materials with hexagonal boron nitride (hBN) is widely used to fabricate ultraclean van der Waals (vdW) heterostructures for optoelectronic and quantum transport studies. These devices are often operated under strong out-of-plane displacement fields that tune the electronic prope...

I. Begichev, Daria Belotcerkovtceva, I. Reznikov et al. · 0 citations

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