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Hyun Yeol Rho

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Sep 2026

Low-Temperature Plasma-Induced Oxygen-Vacancy Engineering Enables Orthorhombic-Phase Stabilization in Hf0.5Zr0.5O2 for 2D FeFETs toward Monolithic 3D Integration

The rapid growth in artificial intelligence and large-scale data processing has driven the urgent demand for energy-efficient electronic devices. Ferroelectric materials, especially hafnium zirconium oxide (Hf0.5Zr0.5O2, HZO), have emerged as promising candidates due to their inherent nonvolatile polarization and com...

Hyun Yeol Rho, Md. Mobaidul Islam, Juno Shim et al. · 0 citations

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