Open access
Aug 2026
Tunnel field-effect transistors exhibiting performance beyond the Boltzmann thermionic limit.
The International Roadmap for Devices and Systems (IRDS) has identified the tunnel field-effect transistor (TFET) as the most promising next-generation logic device that enables sustainable downscaling in driving voltage and power consumption. Demonstrating an acceptable sub-Boltzmann-limit ON current (namely I60, the...
Ze-Han Wu, Ke Yang, Wan-Qing Meng et al.
· Science · 0 citations