Guiding Orthorhombic Phase Evolution in Ultrathin (<4 nm) Hf0.5Zr0.5O2 on Germanium.
The integration of scalable, high-performance Hf0.5Zr0.5O2 (HZO) ferroelectric materials with high-mobility channels such as germanium is critical for next-generation logic and memory devices. However, maintaining robust ferroelectricity in films thinner than 5 nm remains a major challenge. In this study, we systematic...