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Author

Fumei Yang

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Open access Aug 2026

Tunnel field-effect transistors exhibiting performance beyond the Boltzmann thermionic limit.

The International Roadmap for Devices and Systems (IRDS) has identified the tunnel field-effect transistor (TFET) as the most promising next-generation logic device that enables sustainable downscaling in driving voltage and power consumption. Demonstrating an acceptable sub-Boltzmann-limit ON current (namely I60, the...

Ze-Han Wu, Ke Yang, Wan-Qing Meng et al. · 0 citations

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