A novel silicon/APS/MAPbI3-based heterostructure field-effect transistor
In this article, we propose the use of a Silicon/(3-aminopropyl)triethoxysilane (APS)/methylammonium lead iodide (MAPbI 3 ) Heterostructure in a field-effect transistor for the first time. In the proposed transistor, APS molecules are employed as linkers between silicon and MAPbI 3 to improve the interface properties....