Hybrid Filamentary Switching in Fe2O3—Incorporated TiO2 Memristors for Memory and Neuromorphic Computing Application
Memristive devices have emerged as promising candidates for next-generation non-volatile memory and neuromorphic computing systems owing to their simple device architecture, low power consumption, and capability for analog conductance modulation. In this work, Fe2O3-incorporated TiO2 thin films were employed as the act...