Coupling of photoexcitation and grain-boundary disorder in the inverse Hall-Petch plasticity of nanocrystalline CdTe.
The mechanical reliability of nanocrystalline semiconductors limits the durability of photovoltaic and optoelectronic devices, yet how grain size and electron-hole (e-h) excitation jointly govern their plasticity remains poorly understood at the atomic scale. Here we use molecular dynamics (MD) driven by machine-learni...