Epitaxial β-Ga2O3 with tailored UV response for high-performance and stable perovskite solar cells
Ultraviolet exposure accelerates degradation of perovskite absorbers and charge-transport interfaces, whereas internal ultraviolet-protection layers can complicate fabrication and affect charge extraction. Here, Si-doped epitaxial β-Ga2O3 (β-Ga2O3: Si) films were grown on sapphire by metal–organic chemical vapor deposi...