Comparative numerical analysis of intrinsic recombination mechanisms in polar and nonpolar nitride quantum wells
We calculate the radiative and Auger recombination rates in polar c-plane and nonpolar m-plane InxGa1−xN/GaN quantum wells (QWs) with different alloy compositions x ranging from 0.1 to 0.5. The calculation is based on a full-zone electronic structure description obtained with the linear combination of first-principles...