Strain and Interface-Driven Localized Emission in MoSe2 Monolayers on GaN Nanopillars
Solid-state quantum emitters (QEs) in two-dimensional semiconductors offer compact, chip-compatible sources for quantum photonics. In transition-metal dichalcogenides (TMDs), nanopillars are widely used to induce localized emission, yet the underlying confinement mechanism and the relative roles of strain versus diel...